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. Author manuscript; available in PMC: 2011 Mar 1.
Published in final edited form as: Nat Nanotechnol. 2010 Aug 8;5(9):655–659. doi: 10.1038/nnano.2010.154

Figure 5. Magneto-transport properties of a short channel graphene nanoribbon-FET device with width 37 nm and length 200 nm.

Figure 5

a-c, Differential conductance measurements as a function of source-drain bias and gate voltage at (a) 0 T, (b) T and (c) 6 T showing the evolution of diamond of suppressed conductance region with increasing magnetic field. d, Differential conductance (G) versus gate voltage at 0 source-drain bias at magnetic field of 0 T, 3 T and 6 T.