Fig. 6.

Patch-clamp recordings from Vero and GH₄ cells exposed to NheA + B + C (NVH75/95), NheA + B (MHI1672) and NheB + C (MHI1761). Cells were voltage-clamped at a holding potential of −40 mV. Nhe was continuously pressure-ejected onto the cell from the time indicated by the arrow. After a delay of 1–3 min, exposure to NheA + B + C induced large current steps of approximately 400 pA in both Vero (a) and GH₄ (d) cells, indicating insertion of high-conductance channels in the membrane. NheA + B induced current steps of similar size in GH₄ cells (e) but much smaller steps in Vero cells (b). NheB + C had no effect on either of the tested cell types (c, f)