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. Author manuscript; available in PMC: 2011 May 12.
Published in final edited form as: Nano Lett. 2010 May 12;10(5):1941–1949. doi: 10.1021/nl101010m

Figure 3.

Figure 3

Structural characterization of the nanostructures and photovoltaic performance of individual Pt/Si nanowire photodiodes. (a) SEM image of monolayer of close-packed PS spheres. (b) SEM image of monolayer of non-close-packed PS spheres. (c d) SEM images of top view and cross-sectional view of the as-etched Si nanowires. (e, f) SEM images of top view and cross-sectional view of Si nanowires with nanoholes. (g,h) SEM images of top view and cross-sectional view of Pt-filled Si nanowires. i, TEM image of a dry etched Si nanowire. (j) TEM image of a Si nanowire with a nanohole. (k) TEM image of a Pt/Si nanowire heterojunction. (l) Schematic illustration of the fabricated device of individual Pt/Si nanowire photodiode. (m) SEM image of a Pt/Si nanowire device. To make the device, the Pt section was controlled to be ~3 μm. The spherical tip at the Pt end is resulted from intentionally excessive electrodeposition of Pt. (n) I–V data obtained in dark (black) and under one-sun irradiation (red). Scale bar is 5 μm for d, f, and h, 2 μm for a, b, c, e, g and m, and 700 nm for i–k.