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. Author manuscript; available in PMC: 2011 Sep 16.
Published in final edited form as: Nature. 2010 Sep 1;467(7313):305–308. doi: 10.1038/nature09405

Figure 4. Measured small-signal current gain |h21| as a function of frequency f at Vds = −1 V.

Figure 4

a, For a device with gate length = 144 nm at VTG = 1 V; b, For a device with gate length = 182 nm at VTG = 0.3 V; and c, For a device with gate length = 210 nm at VTG = 1.1 V; These different VTG values used are the peak transconductance points for each device. The insets show the fT extraction by Gummel’s method.