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. Author manuscript; available in PMC: 2011 Jan 11.
Published in final edited form as: Nanotechnology. 2010 Aug 12;21(36):365302. doi: 10.1088/0957-4484/21/36/365302

Figure 2.

Figure 2

(a) – (d) SEM images of the cantilevers as a function of substrate bias and Cr thin film thickness; (a) 0 W substrate bias, 18.4 nm, (b) 5 W substrate bias, 12.2 nm, (c) 10 W substrate bias, 11.7 nm, (d) 5 W substrate bias, 16.0 nm, and (e) – (f) SEM images of the cantilevers after 138 nm-thick PECVD SiO2 deposition with Cr film of (e) 0 W substrate bias, 18.4 nm and (f) 5 W substrate bias, 12.2 nm. (g) Typical top-view optical micrograph and profilometer scan for the cantilever with 5 W substrate biased Cr thin film, (h) Cr film stress (solid symbol), and product of stress-thickness (open symbol) as a function of Cr thickness at 0, 5, and 10 W substrate bias.