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. 2011 Jan 4;98(1):013701. doi: 10.1063/1.3529951

Figure 4.

Figure 4

Typical gate voltage dependence of the normalized source-drain current Isd at VD of 0.5 V for (a) ZnS∕SWNT device, immobilized with probe-ssDNA and hybridized with c-ssDNA and (b) bare SWNT device, immobilized with probe-ssDNA and hybridized with c-ssDNA.