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. Author manuscript; available in PMC: 2012 Feb 1.
Published in final edited form as: ACS Appl Mater Interfaces. 2011 Jan 18;3(2):261–270. doi: 10.1021/am1009056

Figure 1.

Figure 1

TEM and SEM images of the silicon nanowires obtained from 1–5 and 0.3–0.8 Ω·cm n-type Si (100) wafer in etchant solutions composed of 4.8 M HF and H2O2 of variable concentrations through a two-step reaction for 30 minutes. (A,B) Nanowires formed from 1–5 Ω·cm silicon wafer with 0.1 M H2O2. (C,D) Nanowires formed from 1–5 Ω·cm silicon wafer with 0.3 M H2O2. (E,F) Nanowires formed from 1–5 Ω·cm silicon wafer with 0.6 M H2O2. (G,H) Nanowires formed from 0.3–0.8 Ω·cm silicon wafer with 0.1 M H2O2. (I,J) Nanowires formed from 0.3–0.8 Ω·cm silicon wafer with 0.3 M H2O2. (K,L) Nanowires formed from 0.3–0.8 Ω·cm silicon wafer with 0.6M H2O2. The scale bars in all SEM and TEM images are 10 µm and 100 nm, respectively.