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. Author manuscript; available in PMC: 2012 Feb 1.
Published in final edited form as: ACS Appl Mater Interfaces. 2011 Jan 18;3(2):261–270. doi: 10.1021/am1009056

Figure 11.

Figure 11

(A) Nitrogen adsorption/desorption isotherms of porous and nonporous silicon nanowires obtained from wafers with various resistivities. The mean BET surface areas of the different nanowires are 370 m2·g−1, 240 m2·g−1, 40 m2·g−1 and 30 m2·g−1, respectively. (B) Nitrogen adsorption/desorption isotherms of porous nanowires obtained from 0.08–0.016 Ω·cm wafer with various reaction time. (C) Corresponding BJH pore size distributions for of different nanowires. The mean pore diameters are 10.0 nm and 9.7 nm for porous silicon nanowires obtained from 0.001 Ω·cm and 0.08–0.016 Ω·cm silicon wafers, respectively.