Skip to main content
. Author manuscript; available in PMC: 2012 Feb 1.
Published in final edited form as: ACS Appl Mater Interfaces. 2011 Jan 18;3(2):261–270. doi: 10.1021/am1009056

Figure 4.

Figure 4

TEM images of the silicon nanowires obtained from four types of wafers with e-beam evaporation deposited Ag-film as the etching metal in etchant solutions composed of 4.8 M HF and 0.3 M H2O2 through a two-step reaction for 15 minutes. (A) Silicon nanowires from 1–5 Ω·cm wafer. (B) Silicon nanowires from 0.3–0.8 Ω·cm wafer. (C) Silicon nanowires from 0.008–0.016 Ω·cm wafer. (D) Silicon nanowires from 0.001–0.002 Ω·cm wafer. The scale bars are 100 nm.