Table 1.

A summary of experimental variables and key results for investigating the effects of oxidizer concentration and the starting wafer resistivity on the pore formation. Ag was chemically deposited on the silicon wafer. The nanowires were obtained by immersing the Ag coated silicon wafer in an etching solution containing 4.8 M HF and H₂O₂ of variable concentration for 30 minutes.

	The resistivity of starting silicon wafer
	1–5 Ω·cm	0.3–0.8 Ω·cm	0.008–0.016 Ω·cm	0.001–0.002 Ω·cm
0.1 M H2O2	Solid nanowires Length: 5.9 µm	Solid nanowires Length: 6.9 µm	Solid nanowires Length: 7.1 µm	Solid/porous coreshell nanowires Length: 3.5 µm
0.3 M H2O2	Rough surface nanowires Length: 17.1 µm	Rough surface nanowires Length: 21.0 µm	Solid/porous coreshell nanowires Length: 21.5 µm	Porous nanowires Length: 18.1 µm
0.6 M H2O2	Rough surface nanowires Length: 25.0 µm	Rough surface nanowires Length: 26.0 µm	Porous nanowires Length: 29.3 µm	Porous nanowire Length: 19.4 µm