Table 2.

Experimental parameters used for investigating the effect of the resistivity of the starting wafer and reaction duration on the length of nanowires. A 20 nm thick Ag film was physically evaporated on the silicon wafer as the etching metal. The concentration of H₂O₂ was kept at 0.3 M.

	The resistivity of starting silicon wafer
	1–5 Ω·cm	0.3–0.8 Ω·cm	0.008–0.016 Ω·cm	0.001–0.002 Ω·cm
10 Minutes	Length: 7.5 um	Length: 5.6 um	Length: 5 um	Length: 2.5 um
15 Minutes	Length: 12.5 um	Length: 11.2 um	Length: 8.1 um	Length: 4.8 um
30 Minutes	Length: 20.6 um	Length: 19.8 um	Length: 16.8 um	Length: 7.0 um