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. 2011 Feb 15;39(4):1358–1377. doi: 10.1007/s10439-011-0266-9

Figure 2.

Figure 2

(a) Simplified electric structure of a SiPM composed of several G-APDs in series with a quenching resistor. (b) Equivalent circuit of a single cell when the device is on (a bias voltage V bias is applied) and is detecting photons. The capacitor C cell initially charged at V bias discharges through R cell dropping the bias voltage to V breakdown. The avalanche process is quenched via the quenching resistor and then the device is recharged