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. 2003 Dec 10;100(26):15510–15515. doi: 10.1073/pnas.2632626100

Table 1. Main parameters used.

Symbol Value, unit Description
I pA Transducer current
X nm Bundle displacement at the tip
po(X) Transducer channel open probability
Inf(X) m-2 Information about X contained in I
Sl pA2 Transducer current power signal
Nl pA2 Transducer current power noise
Mc 0.50 ± 0.16 Noise-matching parameter
Nch 80 ± 26 Number of transducer channels per cell
X0 44 ± 18 nm Bundle displacement at which po = 0.5
σmin 5.9 ± 1.9 nm Intrinsic-channel noise (Cramér—Rao bound)
σB 2.8 ± 0.6 nm Gating-spring noise
Λ90 156 ± 50 nm Operational range of transduction
D 23 ± 7 nm Conformational swing of the channel
Z 174 ± 60 fN Gating force
Ks 7.4 ± 1.0 μN/m Gating-spring constant
Kch(X) μN/m Stiffness of a single gating-spring-channel complex
Kgc(X) μN/m Gating compliance
Kngc(X) Gating compliance normalized to Ks

Values in the second column, when given, were obtained from fitting the two-state gating-spring model to the measured data (n = 11).