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. 2011 May 15;323(1):363–367. doi: 10.1016/j.jcrysgro.2010.10.135

Fig. 1.

Fig. 1

RHEED patterns observed during GeMnTe growth on BaF2 (1 1 1) with xMn=20% at substrate temperatures of 260 °C (left column) and 280 °C (right column). The RHEED patterns were recorded at 10, 50 and 500 nm GeMnTe for Ts=260 °C (a–c) and at 5, 50 and 500 nm for Ts=280 °C (e–f). The used Te excess flux of JTe=0.3 ML/s and growth rate of 0.5 ML/s was the same for both samples.