Fig. 4.

Structural (a) and magnetic properties (b) of 100 nm Ge_1−xMn_xTe layers on BaF₂ (1 1 1) with x_Mn=46% grown at different substrate temperatures of T_s=310, 300 and 290 °C (red, purple and blue lines, respectively) using the same excess Te flux of J_Te=0.2 ML/s. Panel (a) shows high resolution X-ray diffraction scans along the [1 1 1] growth direction from the (1 1 1) to (3 3 3) Bragg reflection. Panel (b) shows the temperature dependent remanent magnetization M(T) of the samples measured at zero external field H_ext after 1 T field cooling to 4 K. The insert displays the corresponding hysteresis loops recorded at 4 K. (For interpretation of the references to colour in this figure legend, the reader is referred to the web version of this article.)