Skip to main content
. Author manuscript; available in PMC: 2011 Jul 20.
Published in final edited form as: IEEE Trans Nanotechnol. 2010 May;9(3):269–280. doi: 10.1109/TNANO.2009.2031807

Fig. 1.

Fig. 1

(a) Schematic of a p-type planar FET device, where S, D, and G correspond to source, drain and gate electrodes, respectively. (b) Schematic of electrically based sensing using a p-type NWFET, where binding of a charged biological or chemical species to the chemically modified gate dielectric is analogous to applying a voltage using a gate electrode.