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. 2011 Jul 1;98(26):264107–264107-3. doi: 10.1063/1.3608155

Figure 1.

Figure 1

(Color online) (a) Schematic of the device structure and experimental setup. (b) Optical micrograph showing two parallel devices. The doped contact regions (pink) and the metal electrodes can be clearly seen as well as the openings in the SU8 layer (passivation layer) atop the nanowires (NWs). An SEM image of a single nanowire is shown. (c) I-V curve for a NW device (after APTES functionalization) showing the drain current (Id) and solution gate leakage current (Isg).