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. Author manuscript; available in PMC: 2012 Jul 18.
Published in final edited form as: Scanning. 2011 Jul 18;33(3):135–146. doi: 10.1002/sca.20262

Figure 7.

Figure 7

Simulation of the electron dose effect on electron beam lithography. Two experimental secondary electron images, after electron beam lithography, where the pattern was A: successfully developed and B: incorrectly developed. C: and D: top view of the energy absorbed in the resist from the electron beam pattern simulated with CASINO. The number of electrons per scan point was: C: electron dose of 130 µC/cm2 and D: electron dose of 700 µC/cm2. The energy absorbed is normalized and displayed on a logarithmic scale.