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. Author manuscript; available in PMC: 2011 Sep 13.
Published in final edited form as: J Micro Nanolithogr MEMS MOEMS. 2010;9(2):023004. doi: 10.1117/1.3378152

Table 1.

Average RIE etch rate (in nanometers per minute) for a set of possible etch stop materials.

Material Average Etch Rate (nm/min)
SiO2 111
AZ3330 107
SU8-3005 255
Aluminum 3.65
Nickel 1.48
Titanium 0.97
Chrome 0.60

The recipe used is a CF4 etch gas at a flow rate of 25 standard cubic centimeters per minute (SCCM), rf power of 300 W, and a chamber pressure of 100 mTorr.