TABLE 2.

Voltage dependence of activation with CssIV^E15A

The voltage dependence of activation was measured as described under “Experimental Procedures” in the presence of 500 nm CssIV^E15A but without the prepulse. The voltage of half-activation (V_0.5) and slope factor of each channel in the presence of 500 nm CssIV^E15A but without the prepulse are derived from fitting the corresponding voltage-dependent activation curve with a single Boltzmann equation. All data are presented as mean ± S.E.

Channel	V0.5	Slope	n
	mV
WT	−29.6 ± 1.1	−5.9 ± 0.3	5
A841N	−27.8 ± 1.2	−5.5 ± 0.2	5
N842R	NAa	NA	NA
V843A	−20.3 ± 1.6	−7.9 ± 0.4	5
E844N	−23.0 ± 0.4	−7.3 ± 0.2	5
L846A	−38.5 ± 1.4	−5.6 ± 0.4	4

^a NA, not applicable because I_VST was present without a prepulse.