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. 2011 Sep 29;108(41):16900-16905. doi: 10.1073/pnas.1105113108

Fig. 4.

Fig. 4.

AFM images showing the evolution of the surface of the 6H Si-face upon annealing. (A) initial surface after hydrogen etching showing half-unit cell steps (0.8 nm) resulting from the miscut; (B) After CCS annealing at 1,300 °C: substrate steps become rounded, (C) annealing at 1,400 °C; the steps roughen, and (D) 1,500 °C: formation of a graphene layer. The scale bar is 5 μm.