AFM images showing the evolution of the surface of the 6H Si-face upon annealing. (A) initial surface after hydrogen etching showing half-unit cell steps (0.8 nm) resulting from the miscut; (B) After CCS annealing at 1,300 °C: substrate steps become rounded, (C) annealing at 1,400 °C; the steps roughen, and (D) 1,500 °C: formation of a graphene layer. The scale bar is 5 μm.