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. 2011 Oct;161-66(19-20):2058–2062. doi: 10.1016/j.synthmet.2011.06.042

Fig. 3.

Fig. 3

(a) Transfer characteristics of a device using parylene-C as a gate insulator measured at VD = 2 V. (b) Corresponding output curves at gate voltages from VG = − 2.5 V to VG = + 2.5 V.