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. 2011 Jan 31;6(1):110. doi: 10.1186/1556-276X-6-110

Table 1.

Sample description of vertical SiNWs analyzed by the CP-AFM technique

Sample name Growth temp. (°C) Description Post-annealing treatment Nominal impurity concentration
CD-08-001 500 Undoped SiNWs/n-type Si (100) - Undoped
CD-08-125 500 Doped SiNWs/n-type Si (100) 5 min at 750°C [P] ≈ 1 × 1018 cm-3
CD-08-021 500 Doped SiNWs/n-type Si (100) 5 min at 750°C [P] ≈ 1 × 1020 cm-3