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Summary of HVPE growth conditions for GaN NWs carried out on 0.5 nm Au/Si(001) at T = 900°C for 60 min via the reaction of Ga with 20 sccms of NH3 and N2:(10-100%) H2
| N2 (sccm) | H2 (sccm) | H2 (%) | L (μm) | |
|---|---|---|---|---|
| CVD817 | 90 | 10 | 10 | 2.3 |
| CVD818 | 40 | 10 | 20 | 3.4 |
| CVD819 | 23 | 10 | 30 | 4.2 |
| CVD821 | 15 | 10 | 40 | 4.7 |
| CVD822 | 10 | 10 | 50 | 5.2 |
| CVD823 | - | 100 | 100 | 11.3 |
Also listed are the average lengths of the GaN NWs.
