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Processing conditions used for depositing the VO2 films
| W- and Mo-doped films | Nb-doped films | |
|---|---|---|
| Base pressure (mbar) | 3 × 10-5 | 3 × 10-5 |
| Work pressure (mbar) | 4 × 10-3 | 1 × 10-3 |
| Oxygen/argon ratio (%) | 14.3 | 50 |
| Total gas flow (sccm) | 19.2 | 6 |
| DC current (A) | 0.5 | - |
| Pulsed-DC current (A) | - | 0.58 |
| Frequency (kHz) | - | 10 |
| Reverse time (μs) | - | 5 |
| Substrate temperature (°C) | 450 | 450 |
| Deposition time (min) | 5 | 3 |
