. 2011 Aug 22;6(1):504. doi: 10.1186/1556-276X-6-504

Table 1.

The comparison of performances of the ZnO nanostructures-based photodetectors

Morphology	Device type	Light of detection (nm)	Bias (V)	Maximum photosensitivity	Photosensitivity enhancement factor from unmodified photodetector	Reference
Nanowires	Resistor	369	2.5	24200	Approximately 5.4	Present work
Nanowire	Resistor	365	5	10⁴- 10⁶	-	[4]
Thinfilm		365	5	31300	Approximately 4.2	[5]
Nanowires film	Resistor	254	5	17.7	-	[10]
Nanowires	Resistor	370	3	3367	Approximately 5.2	[13]
Nanowires film	Resistor	365	8	-	Approximately 4.7	[14]
Nanorod	Resistor	370	20	-	Approximately 3.0	[16]
Nanowires	Resistor	360	3	10⁴	Approximately 2.8	[27]
Nanowires	n-i-n junction	365	-5	1345	-	[28]
Nanowire	Resistor	390	5	10⁴	-	[29]