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. 2011 Sep 1;6(1):517. doi: 10.1186/1556-276X-6-517

Table 1.

Device parameters for solid-state DSSCs with different ZnO morphologies based on three batches of samples

Sample Jsc (mA cm-2) Voc (V) FF η (%)
1 0.72 ± 0.12 0.46 ± 0.05 0.38 ± 0.02 0.13 ± 0.02
2 1.27 ± 0.16 0.50 ± 0.07 0.39 ± 0.01 0.25 ± 0.01
3 1.52 ± 0.04 0.56 ± 0.01 0.40 ± 0.01 0.34 ± 0.02
4 1.86 ± 0.11 0.32 ± 0.03 0.31 ± 0.03 0.19 ± 0.01