Figure 3.

$k_{\mathrm{G}}^{\mathrm{ss}}$ (scaled by $k_{\mathrm{E}}^{\mathrm{ss}}=4Da$) for a gating binding site under either induced switch (red curve) or indifferent switch (blue curve). The indifferent-switch scenario has a constant potential V₀ = V_eff in the binding pocket. Parameters are as follows: κ₀ = ∞; L/a = 5; p_a/p_r = 0.01; p_Ia/p_Ir = 10; e^−βVa = 10³; and e^−βVr = 1.