Skip to main content
. 2010 Sep 28;10(10):8797–8826. doi: 10.3390/s101008797

Figure 20.

Figure 20.

The TEM photograph of the 0.8 μm thick-Ge GOI MIS photodetector. The low-temperature LPD SiO2 was formed on the thin-film Ge instead of the unstable GeO2.