Skip to main content
. 2010 Nov 11;10(11):10155–10180. doi: 10.3390/s101110155

Figure 4.

Figure 4.

(a) LPV measurement on both metal and semiconductor sides in MOS structure of Ti(6.2 nm)/TiO2(1.2 nm)/Si. (b) LPV measurement on both metal and semiconductor sides in MOS structure of Ti(6.2 nm)/SiO2(1.2 nm)/Si. Here the contacts’ distance is 3.2 mm, and the laser wavelength and power are 632 nm and 3 mW respectively.