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. 2010 Nov 11;10(11):10155–10180. doi: 10.3390/s101110155

Figure 6.

Figure 6.

(a) LPV measurement in MOS structures of Ti(6.2 nm)/TiO2/Si with different TiO2 thickness. (b) LPV sensitivities as a function of TiO2 thickness in Ti(6.2 nm)/TiO2/Si structures. Here the contacts’ distance is 3.2 mm, and the laser wavelength and power are 632 nm and 3 mW respectively. Solid line is the plot of Equation (20), where the parameters are chosen as α0 = 0.3 (nm) and αt = 1.25 (nm).