Table 1.

Comparison of the ZnO photoconductors performance.

	Fabrication Method	Electrodes	Doping or Treating	Dark current	Responsivity	Response time	Ref.
photoconductors based on ZnO films	PLD	Al	____	0.2 mA/5 V	____	50 s (rise time) 120 s (fall time)	[4]
	MOCVD	Al	N-doping	450 nA/5 V	400 A/W at 5 V bias	1 μs (rise time) 1.5 μs (fall time)	[14]
	RF Sputtering	Al	____	38 μA / 5 V	18 A/W at 5 V bias	100 ns (rise time) 1.5 μs (fall time)	[15]
	RF Sputtering	Au	____	250 nA / 3 V	30 A/W at 3 V bias	20 ns (rise time) 10 μs (fall time)	[16]
	RF Sputtering	Al, ITO	____	640 μA / 5 V	1616 A/W at 5 V bias	71.2 ns (rise time) 377 μs (fall time)	[17]
	RF Sputtering	Al	Oxygen plasma treatment	400 pA/3 V	1–10 A/W	50 μs (fall time)	[18]
	MBE	Ni/Au	____	38 mA/ (100 V/cm)	<0.05 A/W	0.556 ms (fall time)	[22]
			HCl treatment	0.1–0.2 mA/4 V	0.141 A/W at 10 V bias	____	[19]
	P-MBE	Al/Ti	Ga-doping	10 mA/5 V	1.68 A/W at 20 V bias	95 s (rise time) 2068 s (fall time)	[23]
	Sol-gel	Au	____	∼8 mA/1.5 V	∼0.03 A/W at 5 V bias	160 s (drop to 50% of its maximum Value)	[24]
	RF Sputtering	Al	Ga-doping	____	2.6 A/W at 10 V bias	10 ns (rise time) 960 ns (fall time)	[27]