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. 2011 Apr 27;11(5):4562–4571. doi: 10.3390/s110504562

Table 1.

The sensing properties of ISFETs with Si3N4, Ta2O5, and annealed Ta2O5 sensing membranes.

pH sensitivity (mV/pH) Hysteresis (6-2-6-12-6) (mV) Hysteresis (6-12-6-2-6) (mV) Drift coefficient (mV/h)





Si3N4 51.1 5.1 <1 mV/h
Ta2O5 51.8 15.2 6.3 <1 mV/h
Ta2O5 (anneal) 56.9 0.3 0.7 <1 mV/h