Table 1.
Some typical or expected properties of selected x-ray photoconductors for large area applications. δ is the attenuation depth at the shown photon energy, either 20 keV or 60 keV. From various references and combined selectively. μτ represents the carrier range. From various references including [14,16,67] and those listed in the table. (SP refers to screen printing, and PVD to physical vapor deposition).
| Photoconductor State Preparation |
δ at 20 keV δ at 60 keV |
Eg eV |
W± eV |
Electron μeτe (cm2/V) |
Hole μhτh (cm2/V) |
| Stabilized a-Se Amorphous Vacuum deposition [15] |
49 μm 998 μm |
2.2 | 45 at 10 V/μm 20 at 30 V/μm |
3×10−7–10−5 | 10−6–6 × 10−5 |
| HgI2 Polycrystalline PVD [68] |
32 μm 252 μm |
2.1 | 5 | 10−5–10−3 | 10−6–10−5 |
| HgI2 Polycrystalline SP [56,68–70] |
32 μm 252 μm |
2.1 | 5 | 10−6–10−5 | ∼10−7 |
| Cd.95Zn.05Te Polycrystalline Vacuum deposition (sublimination) |
80 μm 250 μm |
1.7 | 5 | ∼2 × 10−4 | ∼3 × 10−6 |
| PbI2, Polycrystalline Normally PVD [48,49] |
28 μm 259 μm |
2.3 | 5 | 7 × 10−8 | ∼2 × 10−6 [71] |
| PbO, Polycrystalline Vacuum deposition |
12 μm 218 μm |
1.9 | 8–20 | 5 × 10−7 | small |
| TlBr Polycrystalline Vacuum deposition [46] |
18 μm 317 μm |
2.7 | 6.5 | small | 1.5–3 × 10−6 |