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. 2011 Jun 27;11(7):6645–6655. doi: 10.3390/s110706645

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© 2011 by the authors; licensee MDPI, Basel, Switzerland.

This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/).

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Figure 3. — AptaFET device performance: (a) Source/Drain (I_SD) current versus Gate Voltage (V_G) at a Source/Drain Voltage (V_SD) = 0.5 V for unfunctionalized ZnO-FET, ZnO-FET with silane linker, and ZnO-FET with silane linker and aptamer, (b) I_SD vs. V_G with modulation of V_SD. (c) I_SD vs. V_G for conditions of water equilibrium, immediately after exposure of 10 μM riboflavin, and time points of 1 min and 2 min after exposure. (d) Response of an unfunctionalized ZnO-FET after exposure to 10 μM riboflavin.