Table 2.
Symbol | Description | Value |
---|---|---|
Mechanical: | ||
Epoly | Polysilicon Young’s modulus | 160 GPa |
E | Effective Young’s modulus of the beam | 70 GPa |
m | Proof mass weight | 105 μg |
Geometric: | ||
Wb | Cantilever beam width | 13 μm |
Hb | Cantilever thickness from polysilicon layer | 4.2 μm |
Lb | Cantilever beam length | 200 μm |
Lpm | Proof mass length | 500 μm |
Wpm | Proof mass width | 500 μm |
Lpoly | Length of poly resistor | 49.4 μm |
Wpoly | Width of poly resistor | 1.2 μm |
Electrical: | ||
ρs | Polysilicon sheet resistance | 26.1 Ω/square |
αpoly | Polysilicon temperature coefficient of resistance (TCR) | 2.1 × 10−3 K−1* |
ρpoly | Polysilicon resistivity | 9.14 Ωμm |
Thermal: | ||
κAl | Aluminum thermal conductivity | 237 W/(K.m) |
κox | SiO2 thermal conductivity | 1.1 W/(K.m) |
κSi | Silicon thermal conductivity | 170 W/(K.m) |
κpoly | Polysilicon thermal conductivity | 29 W/(K.m) |
Note: This data is obtained from the temperature characterization on the fabricated device.