. Author manuscript; available in PMC: 2012 Jan 1.

Published in final edited form as: IEEE Trans Circuits Syst I Regul Pap. 2011;58(8):1749–1760. doi: 10.1109/TCSI.2010.2103172

TABLE II.

Additional Active Rectifier and LDO Specifications

V_ThN/V_ThP	0.78 V/0.92 V
Nominal rectifier output power	20 mW
Minimum rectifier input voltage	3.2 V (2.9 V^*)
Ripple rejection capacitor (C_L)	10μF(ESR=80mΩ)
Output ripple	80 mV_pp
Comparator power consumption	135 μW^*
Comparator turn-on delay with Offset_F	0.75 ~ 1.5 ns^*
Comparator turn-off delay with Offset_R	−0.7 ~ 0.5 ns^*
Primary coil diameter/inductance (L₁)	16.8 cm/0.88 μH
Secondary coil diameter/inductance (L₂)	3.0 cm/0.41 μH
LDO/BGR current consumption	17μA^/7μA^
LDO output/dropout voltage	3V/150mV
Size of rectifying switches (W_p/L_p = W_n/L_n)	2100 μm/0.6 μm
Total area on chip	0.4 mm²

From simulation