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. Author manuscript; available in PMC: 2012 Nov 9.
Published in final edited form as: Nano Lett. 2011 Oct 10;11(11):4759–4763. doi: 10.1021/nl2025739

Figure 3.

Figure 3

(a) The dual-gate switching characteristics of a single layer graphene FET as a function of top-gate voltage at different fixed bottom-gate voltages and (b–d) the dual-gate switching characteristics of bilayer graphene FET with (b) 2 times, (c) 1 time, and (d) 0 time application of benzyl viologen doping on graphene. Bottom-gate modulation steps are 20 V. The insets in (b–d) show the schematics of doping and the corresponding energy band structures before and after band gap opening.