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. Author manuscript; available in PMC: 2012 Nov 9.
Published in final edited form as: Nano Lett. 2011 Oct 10;11(11):4759–4763. doi: 10.1021/nl2025739

Figure 4.

Figure 4

(a) The schematic illustration of a complementary inverter. (b) The switching behavior of an n-type (BV doped) and a p-type (undoped) bilayer graphene FET as a function of top-gate voltage at different bottom-gate voltages. (c) The electrical switching characteristics (at various bottom-gate voltages) of a complementary inverter assembled by connecting an n- and a p-type bilayer graphene FET together. The inset shows an optical image of a complementary bilayer graphene inverter. Scale bar is 5µm.