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. Author manuscript; available in PMC: 2012 Jun 8.
Published in final edited form as: Nano Lett. 2011 May 6;11(6):2555–2559. doi: 10.1021/nl201331x

Figure 3.

Figure 3

(a) I–V characteristic of a long channel device (L=5.6 µm) under grounded or floated gate condition. (b) Transfer characteristic at different bias voltage for the device with L=2 µm. The inset shows Dirac point shift as a function of bias voltage. (c) Transfer characteristic at different bias voltage for the device with L=100 nm.