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. Author manuscript; available in PMC: 2012 Jun 8.
Published in final edited form as: Nano Lett. 2011 May 6;11(6):2555–2559. doi: 10.1021/nl201331x

Figure 4.

Figure 4

(a) Schematic (top), top view (bottom left) and cross section (bottom right) SEM image of a typical self-aligned device. The scale bar indicates 2 µm in the top view SEM image, and 200nm in the cross section SEM image. (b) Transfer characteristic and (c) corresponding transconductance under different bias voltage for an L=300 nm self-aligned device. (d) Output characteristics of the same device.