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. 2006 Jul 26;1(1):32–45. doi: 10.1007/s11671-006-9017-5

Properties and applications of quantum dot heterostructures grown by molecular beam epitaxy

M Henini 1,✉
PMCID: PMC3246631

Abstract

One of the main directions of contemporary semiconductor physics is the production and study of structures with a dimension less than two: quantum wires and quantum dots, in order to realize novel devices that make use of low-dimensional confinement effects. One of the promising fabrication methods is to use self-organized three-dimensional (3D) structures, such as 3D coherent islands, which are often formed during the initial stage of heteroepitaxial growth in lattice-mismatched systems. This article is intended to convey the flavour of the subject by focussing on the structural, optical and electronic properties and device applications of self-assembled quantum dots and to give an elementary introduction to some of the essential characteristics.

Keywords: Heterostructures, Semiconductors, Self-assembly, Quantum dots, Lasers, Optoelectronics

Acknowledgments

This work is supported by the Engineering and Physical Sciences Research Council (U.K.) and the SANDiE Network of Excellence of the European Commission (Contract no. NMP4-CT-2004-500101). I am grateful to L. Eaves, A. Patane, A. Polimeni, P.C. Main, K. Takehana, F. Pulizzi, A. Levin, S. Sanguinetti, M. Guzzi, M.D. Upward, P. Moriarty, M. Al-Khafaji, A.G. Cullis, E.E. Vdovin, Yu.N. Khanin, Yu.V. Dubrovskii, G. Hill, D. Granados, J.M. Garcia, N.N. Ledenstov and D. Bimberg for their contribution to this work.

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