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. 2011 Dec 19;109(1):285–290. doi: 10.1073/pnas.1119424109

Fig. 4.

Fig. 4.

Reduced voltage dependence of ΔFslow/F0 following PTX treatment and in the ELALL mutant. (A and D) [3H]ACh binding to PTX-injected Cys416-expressing oocytes (A) or ELALL-Cys416 (D) at −88 mV and +5 mV. Results are given as mean ± SEM (n = 6–16 for A and 9–14 for D). (Inset) [3H]ACh binding to control Cys416 (n = 19–28). (B and E) (ΔFslow/F0) − V curves for control TMRM-Cys416 and PTX-injected TMRM-Cys416 (B) or ELALL TMRM-Cys416 (E). Results are given as mean ± SEM, (n = 11–23 for B and 10–23 for E). (Insets) Representative fluorescence traces from one oocyte obtained by stepping from a holding potential of −120 mV to +40 mV in control TMRM-Cys416 and in the PTX-injected TMRM-Cys416 (B) or ELALL TMRM-Cys416 (E). (C and F) Sample traces of gating currents elicited by a depolarizing pulse from −120 mV to +40 mV, measured in PTX-injected oocytes (C) or in ELALL TMRM-Cys416–expressing oocytes (F). (Inset in C) Sample trace of gating currents in the control Cys416, same protocol.