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. 2011 Jul 20;18(Pt 5):802–810. doi: 10.1107/S090904951102485X

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© I. Sergueev et al. 2011

This is an open-access article distributed under the terms of the Creative Commons Attribution Licence, which permits unrestricted use, distribution, and reproduction in any medium, provided the original authors and source are cited.

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Experimental set-up and results of the sapphire crystal quality characterization. Top: experimental set-up at ID18 with the high-heat-load monochromator (HHLM), high-resolution monochromator (HRM) and Si avalanche photodiode (APD). Bottom right: map of the energy width for the reflection (0 1 50) at different points on the sapphire crystal. The dashed ellipses denote the parts of the crystal which were used for monochromatization. Bottom left: energy dependence of the reflectivity for the spots on the crystal indicated by the arrows; the red line is the theoretical reflectivity calculated for an ideal HRM and sapphire crystal.

Inline graphic — Experimental set-up and results of the sapphire crystal quality characterization. Top: experimental set-up at ID18 with the high-heat-load monochromator (HHLM), high-resolution monochromator (HRM) and Si avalanche photodiode (APD). Bottom right: map of the energy width for the reflection (0 1 50) at different points on the sapphire crystal. The dashed ellipses denote the parts of the crystal which were used for monochromatization. Bottom left: energy dependence of the reflectivity for the spots on the crystal indicated by the arrows; the red line is the theoretical reflectivity calculated for an ideal HRM and sapphire crystal.