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. 2009 Dec 2;9(12):9734–9740. doi: 10.3390/s91209734

Figure 1.

Figure 1.

Cu-Pt film (8 nm) on a p type silicon with an ultra thin insulating (SiO2) layer and CuPt (8nm)/SiO2 (5 nm)/Si (50,000 nm)/SiO2 (5 nm)/CuPt (8 nm) array structure Fabrication procedure is shown on the left and the measurement procedure is shown on the right.