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. 2009 Dec 2;9(12):9734–9740. doi: 10.3390/s91209734

Figure 3.

Figure 3.

I-V Curve made at liquid nitrogen temperature and room temperature (inset of Figure3) for CuPt/Sio2/Si/Sio2/CuPt structure respectively. External magnetic field is applied parallel to the surface of the device for low voltages.