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. 2009 Dec 2;9(12):9734–9740. doi: 10.3390/s91209734

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© 2009 by the authors; licensee Molecular Diversity Preservation International, Basel, Switzerland.

This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution license (http://creativecommons.org/licenses/by/3.0/).

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Figure 4. — I-V Curve made at liquid nitrogen temperature and room temperature (inset of Figure 4) for CuPt/Sio₂/Si/Sio₂/CuPt structure respectively. External magnetic field is applied parallel to the surface of the device for higher voltages.