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. 2012 Jan 17;3:629. doi: 10.1038/ncomms1640

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(a) The spin current density generated by the spin pumping for τ_sf=9 ps. Here is the spin current density at the interface when the external magnetic field is applied along the film plane (θ=0). The parameters used for the calculation are shown in the text. (b) An equivalent circuit model of the Ni₈₁Fe₁₉/p-Si film. R_F is the electrical resistance of the Ni₈₁Fe₁₉ layer. (c) A simplified equivalent circuit model of the Ni₈₁Fe₁₉/p-Si film. (d) The spin relaxation time τ_sf dependence of the ISHE signal V_ISHE at θ=80° calculated from equation (5).

Inline graphic — (a) The spin current density generated by the spin pumping for τ_sf=9 ps. Here is the spin current density at the interface when the external magnetic field is applied along the film plane (θ=0). The parameters used for the calculation are shown in the text. (b) An equivalent circuit model of the Ni₈₁Fe₁₉/p-Si film. R_F is the electrical resistance of the Ni₈₁Fe₁₉ layer. (c) A simplified equivalent circuit model of the Ni₈₁Fe₁₉/p-Si film. (d) The spin relaxation time τ_sf dependence of the ISHE signal V_ISHE at θ=80° calculated from equation (5).