. 2011 Jan 12;11(1):696–718. doi: 10.3390/s110100696

Table 1.

Summary of recent Ge epitaxy method from selected groups.

	Group	Year	Ref.	Tool	Low Temp. buffer	High Temp. Ge	Anneal	Aneal condition	RMS (nm)	TDD (cm⁻²)
two-step LT/HT growth	IEF	2004	[13]	RPCVD	400 °C 25 nm Ge	<750 °C 730 nm	yes	750/875 °C, 10 cycles	2.2	<2 × 10⁸
	IEF	2009	[20]	RPCVD	400 °C 40 nm Ge	730 °C 300 nm	yes	not specified	-	-
	Intel	2006	[21]	RPCVD	400 °C 100 nm Ge	670 °C 1.2 μm	yes	900 °C, 15 min	-	∼1 × 10⁷
	IBM	2004	[22]	UHVCVD	350 °C 50 nm Ge	600 °C 400 nm	yes	780/900 °C, 10 cycles	-	∼1 × 10⁸
	Univ. stuttgart	2005	[14]	MBE	thin LT buffer	550° C 1 μm	no	-	-	-
	MIT	1999	[16]	UHVCVD	350 °C 30 nm Ge	600 °C 1 μm	yes	780/900 °C, 10 cycles	-	∼2 × 10⁷
	MIT	2007	[23]	UHVCVD	360 °C 60 nm Ge	730 °C 1.1 μm	yes	650/850 °C, cyclic	-	-
	Luxtera	2007	[24]	RPCVD	no buffer	350 °C 200 nm	no	-	-	-
	Kotura	2010	[19]	CVD	400 °C 100 nm Ge	670 °C 1.1 μm	yes	not specified	-	-
	ETRI	2009	[25]	RPCVD	400 °C 100 nm Ge	650 °C 1.2/1.7 μm	no	-	1.3	-
	Univ. Roma Tre	2006	[18]	UHVCVD	350 °C thin Ge	600 °C 1 μm	no	-	-	-
SiGe buffer	Unvi. Texas	2004	[26]	UHVCVD	1 μm SiGe	400 °C 2.5 μm	yes	750 °C, 15 min	-	-
	Canon ANELVA	2006	[27]	UHVCVD	450–520 °C 13 nm SiGe 370 °C 30 nm Ge	550–600 °C 1 μm	yes	800 °C, 15 min	0.44	-
	IME	2007	[28]	UHVCVD	350–400 °C 30 nm SiGe 350–400 °C 30 nm Ge	550–600 °C 100 nm	no	-	1.4	∼1 × 10⁷
H₂ anneal	Stanford	2008	[29]	RPCVD	350 °C 200 nm Ge	600 °C 400 nm	yes	800 °C, 30 min, in H₂	∼1	0.8–1 × 10⁷
LEPECVD	Como	2009	[30]	LEPECVD	no buffer	500–600 °C 1 μm	yes	600/780 °C, 3 cycles	-	2 × 10⁷