Table 2.

Summary of performances from selected Ge photodetectors.

Year	Reference	1st author	structure	Idark (μA)@−1 V	Responsivity @λ = 1.55 µm @−1 V (A/W)	Highest 3 dB electrical bandwidth (GHz)	APD gain-bandwidth product (GHz)
2000	[4]	L. Colace	NI PIN	12	0.25	∼0.4@−4 V	-
2002	[17]	S. Fama	NI PIN	1.2	0.75	2.5@−1 V	-
2005	[14]	M. Jutzi	NI PIN	0.08	0.035@0 V	39@−2 V	-
2005	[33]	J. Liu	NI PIN	∼0.8	0.56	8.5@−1 V	-
2005	[45]	O. I. Dosunmu	NI PIN RCE	0.38@−5 V	0.73	12.1@−3 V	-
2006	[18]	L. Colace	NI PIN	∼10	0.2	10@−1 V	-
2007	[40]	L. Vivien	WG MSM	130	1	25@−6 V	-
2007	[23]	D. Ahn	WG PIN	0.9	0.87	7.5@−3 V	-
2007	[47]	T. Yin	WG PIN	0.267@−2 V	1.16@−2 V	29.4@−2 V	-
2008	[48]	J. Wang	WG PIN	0.06	0.65	18@−1 V	-
2009	[49]	L. Chen	WG MSM	4@−5 V	∼1	40@−5 V	-
2009	[50]	S. Klinger	NI PIN	∼0.10	0.05@−2 V	49@−2 V	-
2009	[25],	D. Suh	NI PIN	0.042	0.47	36@−3 V	-
2009	[20]	L. Vivien	WG PIN	∼1	1	42@−4 V	-
2009	[51]	D. Suh	WG PIN	0.072	0.8	47@−3 V	-
2010	[19]	D. Feng	WG PIN	1.3	1.1	36.8@−3 V	-
2010	[52]	S. Assefa	WG MSM	90	0.14	40@−2 V	-
2008	[53]	Y. Kang	NI SACM APD	∼10@25 V	∼15.6@∼25 V@1.3 μm	∼12@∼25 V	340
2010	[54]	K. Ang	WG SACM APD	∼100@23 V	16.8@∼23 V	5@∼23 V	105
2010	[55]	S. Assefa	WG MSM APD	∼100@	-	∼35@1.5 V	350